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Modulation doping and energy filtering in two-dimensional, dichalcogenides: Moving toward flexible thermoelectrics with a ZT ~ 1

Abstract

David L Carroll

Two-dimensional systems, with merely connected topologies, are synthesized in dichalcogenides. Such materials gift novel opportunities in heterogeneous physical phenomenon. This speak can demonstrate a part coherent, metal dopant supplemental to reactive edges of those low-dimensional dichalcogenide system that dramatically alters the physical phenomenon behavior of such materials in sudden ways in which. Temperature dependent conduction suggests that native band bending across the interface acts as associate degree energy filter for carrier injection. Further, important decoupling between the electrical conduction and Seebeck constant is ascertained in films of those platelettes, resulting in astonishingly high power factors. A fivefold/eightfold increase in electricity figure of benefit (ZT) and power issue (PF) is seen over pure Bi2Te3 platelettes with the addition of Ag/Cu severally, with the correlate being the barrier height at the platelette edge. This yields a ZT of zero.39 for Ag-doped Bi2Te3 and zero.6 for Cudoped Bi2Te3, each at temperature. The ZT is more augmented to zero.93 at 470 K within the atomic number 29 case. initial principles band structure calculations show that the physics of the semiconductor-metal interfaces square measure quite totally different for edge and facial configurations, suggesting that the location of metal dopant plays a vital role within the increased electricity performance.

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