An accurate numerical model for charge density in ballistic carbon nanotube field effect transistors (CNTFETs)

Abstract

Bao-jun Liu, Li Cai, Xiaokuo Yang, Hongtu Huang, Xiaohui Zhao, Ying Wen

Since the discovery of carbon nanotube (CNT), a great deal of groups pays more attention to it due to its unique properties. The theory of ballistic transport carbon nanotube field effect transistors (CNTFETs) is presented in the paper, and then a numerical model based on Newton-Raphson and linear approximation method for charge densities in CNTFET is proposed. The model could efficiently provide accurate solution to the self-consistent potential in a CNTFET, which is a function of parameters such as terminal voltages, CNT diameter, and Fermi level and so on. The model is simulated and the results show that compared with the piece-wise linear approximation, the numerical model in the paper is more accurate and efficient.